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WF5025 series Crystal Oscillator Module ICs
OVERVIEW
The WF5025 series are miniature crystal oscillator module ICs. They feature a damping resistor RD matched to the crystal's characteristics to reduce crystal current. The pad layout is arranged for flip chip mounting, which gives the pattern design more flexibility, even for mounting ultra-miniature crystal oscillators that provide almost no space for wiring patterns. They support fundamental oscillation and 3rd overtone oscillation modes. The WF5025 series can be used to correspond to wide range of applications.
FEATURES
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Pad layout optimized for flip chip mounting Miniature-crystal matched oscillator characteristics Operating supply voltage range * 2.5V operation: 2.25 to 2.75V * 3.0V operation: 2.7 to 3.6V Recommended operating frequency range * For fundamental oscillator - WF5025ALx: 20MHz to 50MHz - WF5025BL1: 20MHz to 100MHz * For 3rd overtone oscillator - WF5025MLx: 70MHz to 133MHz -40 to 85C operating temperature range Oscillator capacitor with excellent frequency characteristics built-in
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Oscillator circuit with damping resistor RD builtin for reduced crystal current Standby function * High impedance in standby mode, oscillator stops Low standby current * Power-saving pull-up resistor built-in Oscillation detector function Frequency divider built-in (WF5025ALx) * varies with version: fO, fO/2, fO/4, fO/8, fO/16, fO/32 CMOS output duty level (1/2VDD) 50 5% output duty @ 1/2VDD 30pF output load Molybdenum-gate CMOS process
SERIES CONFIGURATION
Version Operating supply voltage [V] Oscillation mode Recommended Output operating frequency current range (fundamental (VDD = 2.5V) [mA] oscillation)*1 [MHz] Standby mode Output frequency fO fO/2 2.25 to 3.6 Fundamental 20 to 50 4 fO/4 fO/8 fO/16 fO/32 2.25 to 3.6 Fundamental 20 to 100 70 to 80 2.25 to 3.6 3rd overtone 80 to 100 90 to 133 8 fO CMOS Yes Hi-Z 8 fO CMOS Yes Hi-Z CMOS Yes Hi-Z Output duty level Oscillator stop function Output state
WF5025AL1 WF5025AL2 WF5025AL3 WF5025AL4 WF5025AL5 WF5025AL6 WF5025BL1*2 WF5025MLA (WF5025MLB) WF5025MLC
*1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. The WF5025BL1 has a higher maximum operating frequency, hence the negative resistance is also larger than in the WF5025ALx devices. Note. These versions in parentheses ( ) are under development. Please ask our Sales & Marketing section for further detail.
ORDERING INFORMATION
Device WF5025xxx-3 Package Wafer form NIPPON PRECISION CIRCUITS INC.--1
WF5025 series
PAD LAYOUT
(Unit: m)
(750,850)
HA5025
VSS Y
Q VDD
INHN
NPC
XT (0,0) X
Chip size: 0.75 x 0.85mm Chip thickness: 180 20m PAD size: 90m Chip base: VDD level
XTN
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [m] Name I/O Description X INHN XT XTN VDD Q VSS I I O - O - Output state control input. High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. Amplifier input Amplifier output Supply voltage Output. Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32. High impedance in standby mode Ground Crystal connection pins. Crystal is connected between XT and XTN. 144.6 171.0 579.0 618.2 618.2 131.8 Y 413.4 144.6 144.6 438.6 705.4 718.2
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WF5025 series
BLOCK DIAGRAM
For Fundamental Oscillator (WF5025ALx, WF5025BL1)
VDD VSS XTN
CG CD
RD
XT
Rf 1/2 1/2 1/2 1/2 1/2
Q INHN
INHN = LOW active
For 3rd Overtone Oscillator (WF5025MLx)
VDD VSS XTN
CG Rf 1 Cf CD
RD
XT
Rf 2
Q
INHN
INHN = LOW active
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WF5025 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current Symbol VDD VIN VOUT Topr TSTG IOUT Condition Rating -0.5 to +7.0 -0.5 to VDD + 0.5 -0.5 to VDD + 0.5 -40 to +85 -65 to +150 20 Unit V V V C C mA
Recommended Operating Conditions
VSS = 0V
Rating*1 Parameter Symbol WF5025ALx WF5025BL1 WF5025MLA Operating supply voltage VDD WF5025MLB WF5025MLC Input voltage Operating temperature VIN TOPR WF5025ALx WF5025BL1*3 Operating frequency*2 fO WF5025MLA WF5025MLB*3 WF5025MLC*3 Condition min CL 30pF CL 30pF f 80MHz, CL 30pF f 100MHz, CL 30pF f 100MHz, CL 30pF f 133MHz, CL 15pF 2.25 2.25 2.25 (2.25) 2.25 2.25 VSS -40 20 20 70 (80) 90 typ - - - - - - - - - - - - - max 3.6 3.6 3.6 (3.6) 3.6 3.6 VDD +85 50 100 80 (100) 133 V V V V V V V C MHz MHz MHz MHz MHz Unit
*1. Values in parentheses ( ) are provisional only. *2. The operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *3. When 2.5V operation, the ratings of switching characteristics are difference by the frequency or output load. Refer to "Switching Characteristics".
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WF5025 series
Electrical Characteristics
WF5025ALx (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.25V, IOH = 4mA Q: Measurement cct 2, VDD = 2.25V, IOL = 4mA INHN INHN Q: Measurement cct 2, INHN = LOW VOH = VDD VOL = VSS WF5025AL1 WF5025AL2 Current consumption IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF, f = 50MHz WF5025AL3 WF5025AL4 WF5025AL5 WF5025AL6 Standby current INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance IST RUP1 RUP2 Rf RD CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Measurement cct 3, INHN = LOW Measurement cct 4 20 50 340 6.8 Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF 100 - 400 8 200 150 460 9.2 1.65 - 0.7VDD - - - - - - - - - - 2 typ 1.95 0.3 - - - - 7 4.5 3.5 2.9 2.5 2.4 - 6 max - 0.4 - 0.3VDD 10 10 14 9 7 5.8 5 4.8 3 12 V V V V A A mA mA mA mA mA mA A M k k pF Unit
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WF5025 series WF5025ALx (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA INHN INHN Q: Measurement cct 2, INHN = LOW VOH = VDD VOL = VSS WF5025AL1 WF5025AL2 Current consumption IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF, f = 50MHz WF5025AL3 WF5025AL4 WF5025AL5 WF5025AL6 Standby current INHN pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance IST RUP1 RUP2 Rf RD CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Measurement cct 3, INHN = LOW Measurement cct 4 15 50 340 6.8 Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF 75 - 400 8 150 150 460 9.2 k k pF 2.3 - 0.7VDD - - - - - - - - - - 2 typ 2.4 0.3 - - - - 8.5 5.5 4 3.3 2.9 2.7 - 4 max - 0.4 - 0.3VDD 10 10 17 11 8 6.6 5.8 5.4 5 8 V V V V A A mA mA mA mA mA mA A M Unit
NIPPON PRECISION CIRCUITS INC.--6
WF5025 series WF5025BL1 (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ IDD2 IST RUP1 RUP2 Feedback resistance Oscillator amplifier output resistance Built-in capacitance Rf RD CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Condition min Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW VOH = VDD VOL = VSS Measurement cct 3, load cct 1, INHN = open, CL = 30pF, f = 100MHz Measurement cct 3, INHN = LOW Measurement cct 4 20 50 170 6.8 Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF 100 - 200 8 200 150 230 9.2 k k pF 1.65 - 0.7VDD - - - - - 2 typ 1.95 0.3 - - - - 14 - 6 max - 0.4 - 0.3VDD 10 10 28 3 12 V V V V A A mA A M Unit
Current consumption Standby current INHN pull-up resistance
WF5025BL1 (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ IDD2 IST RUP1 RUP2 Feedback resistance Oscillator amplifier output resistance Built-in capacitance Rf RD CG CD Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW VOH = VDD VOL = VSS Measurement cct 3, load cct 1, INHN = open, CL = 30pF, f = 100MHz Measurement cct 3, INHN = LOW Measurement cct 4 15 50 170 6.8 Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF 75 - 200 8 150 150 230 9.2 k k pF 2.3 - 0.7VDD - - - - - 2 typ 2.4 0.3 - - - - 19 - 4 max - 0.4 - 0.3VDD 10 10 38 5 8 V V V V A A mA A M Unit
Current consumption Standby current INHN pull-up resistance
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WF5025 series WF5025MLx (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating*1 Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 100MHz f = 133MHz f = 72MHz IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF Measurement cct 3, INHN = LOW Measurement cct 4 20 WF5025MLA AC feedback resistance Rf1 Design value. A monitor pattern on a wafer is tested. Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. WF5025MLA CG Built-in capacitance WF5025MLA CD Design value. A monitor pattern on a wafer is tested. WF5025MLB WF5025MLC *1. Values in parentheses ( ) are provisional only. 3.40 (3.40) 3.40 4 (4) 4 4.60 (4.60) 4.60 pF pF pF Design value. A monitor pattern on a wafer is tested. WF5025MLB WF5025MLC WF5025MLB WF5025MLC DC feedback resistance Oscillator amplifier output resistance AC feedback capacitance Rf2 RD Cf 3.99 TBD 2.97 50 85 8.5 1.70 (1.70) 0.85 100 4.7 TBD 3.5 - 100 10 2 (2) 1 200 5.41 TBD 4.03 150 115 11.5 2.30 (2.30) 1.15 k k k k k pF pF pF pF f = 100MHz f = 100MHz Standby current INHN pull-up resistance IST RUP1 RUP2 VOH = VDD VOL = VSS WF5025MLB WF5025MLC WF5025MLA WF5025MLB WF5025MLC 1.65 - 0.7VDD - - - - - - - - - 2 typ 1.95 0.3 - - - - TBD 15 11 TBD 15 - 6 max - 0.4 - 0.3VDD 10 10 TBD 30 22 TBD 30 3 12 V V V V A A mA mA mA mA mA A M Unit
IDD1 Current consumption
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WF5025 series WF5025MLx (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating*1 Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA INHN INHN Q: Measurement cct 2, INHN = LOW Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 100MHz f = 133MHz f = 72MHz IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF Measurement cct 3, INHN = LOW Measurement cct 4 15 WF5025MLA AC feedback resistance Rf1 Design value. A monitor pattern on a wafer is tested. Measurement cct 5 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. WF5025MLA CG Built-in capacitance WF5025MLA CD Design value. A monitor pattern on a wafer is tested. WF5025MLB WF5025MLC *1. Values in parentheses ( ) are provisional only. 3.40 (3.40) 3.40 4 (4) 4 4.60 (4.60) 4.60 pF pF pF Design value. A monitor pattern on a wafer is tested. WF5025MLB WF5025MLC WF5025MLB WF5025MLC DC feedback resistance Oscillator amplifier output resistance AC feedback capacitance Rf2 RD Cf 3.99 TBD 2.97 50 85 8.5 1.70 (1.70) 0.85 75 4.7 TBD 3.5 - 100 10 2 (2) 1 150 5.41 TBD 4.03 150 115 11.5 2.30 (2.30) 1.15 k k k k k pF pF pF pF f = 100MHz f = 100MHz Standby current INHN pull-up resistance IST RUP1 RUP2 VOH = VDD VOL = VSS WF5025MLB WF5025MLC WF5025MLA WF5025MLB WF5025MLC 2.3 - 0.7VDD - - - - - - - - - 2 typ 2.4 0.3 - - - - TBD 20 15 TBD 20 - 4 max - 0.4 - 0.3VDD 10 10 TBD 40 30 TBD 40 5 8 V V V V A A mA mA mA mA mA A M Unit
IDD1 Current consumption
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WF5025 series
Switching Characteristics
WF5025ALx (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle*1 Output disable delay time*2 Output enable delay time*2 Duty1 Duty2 tPLZ tPZL Condition min Output rise time Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25C, f = 50MHz CL = 15pF CL = 30pF CL = 15pF CL = 30pF CL = 15pF CL = 30pF - - - - 45 45 - - typ 3 5 3 5 - - - - max 6 10 6 10 55 55 100 100 ns ns ns ns % % ns ns Unit
Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25C, CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot. *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
WF5025ALx (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle*1 Output disable delay time*2 Output enable delay time*2 Duty1 Duty2 tPLZ tPZL Condition min Output rise time Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25C, f = 50MHz CL = 15pF CL = 30pF CL = 15pF CL = 30pF CL = 15pF CL = 30pF - - - - 45 45 - - typ 2.5 4.5 2.5 4.5 - - - - max 5 9 5 9 55 55 100 100 ns ns ns ns % % ns ns Unit
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25C, CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot. *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
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WF5025 series WF5025BL1 (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter Symbol tr1 Output rise time tr2 tr3 tf1 Output fall time tf2 tf3 Duty1 Output duty cycle*1 Duty2 Duty3 Output disable delay time*2 Output enable delay time*2 tPLZ tPZL Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25C Condition min Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.2VDD to 0.8VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, 0.8VDD to 0.2VDD CL = 15pF CL = 30pF CL = 30pF CL = 15pF CL = 30pF CL = 30pF CL = 15pF f = 100MHz CL = 30pF f = 80MHz CL = 30pF f = 100MHz Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25C, CL = 15pF - - - - - - 45 45 40 - - typ 2 3 2.5 2 3 2.5 - - - - - max 4 6 5 4 6 5 55 55 60 100 100 ns ns ns ns ns ns % % % ns ns Unit
*1. The duty cycle characteristic is checked the sample chips of each production lot. *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
WF5025BL1 (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle*1 Output disable delay time*2 Output enable delay time*2 Duty1 Duty2 tPLZ tPZL Condition min Output rise time Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25C, f = 100MHz CL = 15pF CL = 30pF CL = 15pF CL = 30pF CL = 15pF CL = 30pF - - - - 45 45 - - typ 1.5 2.5 1.5 2.5 - - - - max 3 5 3 5 55 55 100 100 ns ns ns ns % % ns ns Unit
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25C, CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot. *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS INC.--11
WF5025 series WF5025MLx (2.5V operation) VDD = 2.25 to 2.75V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating*1 Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Condition min Output rise time Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25C, CL = 15pF Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25C, CL = 30pF f = 72MHz f = 100MHz f = 133MHz f = 72MHz f = 100MHz f = 100MHz CL = 15pF CL = 30pF CL = 15pF CL = 30pF WF5025MLA WF5025MLB WF5025MLC WF5025MLA WF5025MLB WF5025MLC - - - - 45 (45) 45 45 (40) 40 - - typ 2 3 2 3 - - - - - - - - max 4 6 4 6 55 (55) 55 55 (60) 60 100 100 ns ns ns ns % % % % % % ns ns Unit
Duty1 Output duty cycle*2 Duty2
Output disable delay time*3 Output enable delay time*3
tPLZ tPZL
Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25C, CL = 15pF
*1. Values in parentheses ( ) are provisional only. *2. The duty cycle characteristic is checked the sample chips of each production lot. *3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
WF5025MLx (3.0V operation) VDD = 2.7 to 3.6V, VSS = 0V, Ta = -40 to +85C unless otherwise noted.
Rating*1 Parameter Symbol tr1 tr2 Output fall time tf1 tf2 Condition min Output rise time Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25C, CL = 15pF Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25C, CL = 30pF f = 72MHz f = 100MHz f = 133MHz f = 72MHz f = 100MHz CL = 15pF CL = 30pF CL = 15pF CL = 30pF WF5025MLA WF5025MLB WF5025MLC WF5025MLA WF5025MLB WF5025MLC - - - - 45 (45) 45 45 (45) 45 - - typ 1.5 2.5 1.5 2.5 - - - - - - - - max 3 5 3 5 55 (55) 55 55 (55) 55 100 100 ns ns ns ns % % % % % % ns ns Unit
Duty1
Output duty cycle*2 Duty2
Measurement cct 3, load cct 1, VDD = 3.3V, Ta = 25C, CL = 30pF, f = 100MHz Output disable delay time*3 Output enable delay time*3 tPLZ tPZL
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25C, CL = 15pF
*1. Values in parentheses ( ) are provisional only. *2. The duty cycle characteristic is checked the sample chips of each production lot. *3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
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WF5025 series
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version WF5025ALx HIGH (or open) WF5025BL1, MLx WF5025ALx, BL1, MLx LOW INHN Q Any fO, fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency fO High impedance Stopped Oscillator Normal operation
Power-save Pull-up Resistor
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
NIPPON PRECISION CIRCUITS INC.--13
WF5025 series
MEASUREMENT CIRCUITS
Measurement cct 1 Measurement cct 4
Signal Generator
C1 XT R1 XTN INHN
VDD Q VSS R2
XT XTN INHN
VDD Q VSS RUP1 = VDD IPR (VPR = VSS)
V
VPR VDD VOH 0V IPR
RUP2 = VDD VPR IPR (VPR = 0.7VDD)
A
Q output
2Vp-p, 10MHz sine wave input signal C1: 0.001F R1: 50 R2: 5025ALx : 412 (2.5V operation) 575 (3.0V operation) 5025BL1, MLx : 206 (2.5V operation) 287 (3.0V operation)
Measurement cct 5
Measurement cct 2
XT XTN INHN
VDD Rf = Q Rf 2 = VSS
VDD IRf VDD IRf
IZ, IOL XT XTN INHN VDD Q VSS IZ
A A
IRf
V
VOH VOL
Measurement cct 6
Measurement cct 3
Signal Generator
C1 XT R1 XTN INHN
VDD Q VSS
A
XT X'tal XTN INHN VDD
IDD1, IDD2 IST
Q VSS
2Vp-p, 10MHz sine wave input signal C1: 0.001F R1: 50
Load cct 1
Q output CL
(Including probe capacitance)
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WF5025 series
Switching Time Measurement Waveform
Output duty level, tr, tf
0.9VDD 0.8VDD
0.9VDD 0.8VDD 0.2VDD 0.1VDD
Q output
0.2VDD 0.1VDD
DUTY measurement voltage (0.5V DD)
tr3 tr1,tr2
Output duty cycle
TW
tf3 tf1,tf2
Q output
TW T
DUTY measurement voltage (0.5VDD) DUTY= TW/ T 100 (%)
Output Enable/Disable Delay
when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay.
INHN
VIL
VIH
tPLZ Q output
INHN input waveform
tPZL
tr = tf
10ns
NIPPON PRECISION CIRCUITS INC.--15
WF5025 series
Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter "Products") are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from NIPPON PRECISION CIRCUITS INC. (hereinafter "NPC"). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp
NC0315CE 2005.11
NIPPON PRECISION CIRCUITS INC.--16

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